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BLS6G3135-20

Ampleon
Part Number BLS6G3135-20
Manufacturer Ampleon
Description LDMOS S-Band radar power transistor
Published Apr 26, 2018
Detailed Description BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 5 — 1 September 2015 Product data sheet 1. Produc...
Datasheet PDF File BLS6G3135-20 PDF File

BLS6G3135-20
BLS6G3135-20

Overview
BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev.
5 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 20 W LDMOS power transistor intended for radar applications in the 3.
1 GHz to 3.
5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA; in a class-AB production test circuit.
Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) Pulsed RF 3.
1 to 3.
5 32 20 15.
5 45 20 10 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features and benefits  Typical pulsed RF performance at a frequency of 3.
1 GHz to 3.
5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 s and a  of 10 %:  Output power = 20 W  Power gain = 15.
5 dB  Efficiency = 45 %  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent ...


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