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BLS6G3135-20

NXP Semiconductors
Part Number BLS6G3135-20
Manufacturer NXP Semiconductors
Description LDMOS S-Band radar power transistor
Published Jun 18, 2010
Detailed Description BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 www.DataSheet4U.com Product dat...
Datasheet PDF File BLS6G3135-20 PDF File

BLS6G3135-20
BLS6G3135-20

Overview
BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev.
03 — 3 March 2009 www.
DataSheet4U.
com Product data sheet 1.
Product profile 1.
1 General description 20 W LDMOS power transistor intended for radar applications in the 3.
1 GHz to 3.
5 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit.
Mode of operation f (GHz) Pulsed RF VDS (V) PL (W) 20 Gp (dB) 15.
5 ηD (%) 45 tr (ns) 20 tf (ns) 10 3.
1 to 3.
5 32 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features I Typical pulsed RF performance at a frequency of 3.
1 GHz to 3.
5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: N Output power = 20 W N Power gain = 15.
5 dB N Efficiency = 45 % I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband o...


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