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BFP520F

Infineon Technologies AG
Part Number BFP520F
Manufacturer Infineon Technologies AG
Description Low Noise Silicon Bipolar RF Transistor
Published Mar 23, 2005
Detailed Description Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier Outstanding Gms = 22.5 dB at 1.8 GHz ...
Datasheet PDF File BFP520F PDF File

BFP520F
BFP520F

Overview
Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier Outstanding Gms = 22.
5 dB at 1.
8 GHz Minimum noise figure NFmin = 0.
95 dB at 1.
8 GHz • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available BFP520F 3 2 4 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP520F Marking Pin Configuration APs 1=B 2=E 3=C 4=E - - Package TSFP-4 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 98 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 1TS is measured on the emitter lead at the soldering point to pcb Thermal Resistance Parameter J...


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