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BFP520

Siemens Semiconductor Group
Part Number BFP520
Manufacturer Siemens Semiconductor Group
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description SIEGET ®45 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V O...
Datasheet PDF File BFP520 PDF File

BFP520
BFP520

Overview
SIEGET ®45 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.
8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.
95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalization for high reliability • SIEGET ® 45 - Line Siemens Grounded Emitter Transistor 45 GHz fT - Line BFP 520 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP 520 Marking Ordering Code APs Q62702-F1794 Pin Configuration 1=B 2=E 3=C 4=E Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, T S ≤ 105 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) Symbol Value 2.
5 12 1 40 4 100 150 -65 .
.
.
+150 -65 .
.
.
+150 Unit V V V mA mA mW °C °C °C VCEO VCBO VEBO IC IB Ptot Tj TA Tstg RthJS ≤ 450 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BFP 520 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Collector-emitter breakdown voltage I C = 1 mA, I B = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1.
5 V, I C = 0 DC current gain I C = 20 mA, VCE = 4 V AC characteristics Transition frequency IC = 30 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector-emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.
5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.
8 GHz Power gain 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.
8 GHz Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.
8 GHz, ZS = ZL = 50Ω Third order intercept point at output VCE = 2 V, f = 1.
8 GHz, ZS =ZSopt, ZL=ZLopt , IC = 20 mA IC = 7 mA 1dB compression point VCE = 2 V,...


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