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BFP520

Infineon Technologies AG
Part Number BFP520
Manufacturer Infineon Technologies AG
Description Low Noise Silicon Bipolar RF Transistor
Published Mar 23, 2005
Detailed Description Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or ...
Datasheet PDF File BFP520 PDF File

BFP520
BFP520

Overview
Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.
2 V or 1.
8 V supply voltage • Common e.
g.
in cordless phones, satellite receivers and oscillators up to 22 GHz • High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz • Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads • Qualification report according to AEC-Q101 available BFP520 3 4 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP520 Marking Pin Configuration APs 1=B 2=E 3=C 4=E - - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 105 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 1TS...


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