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BCR183S

Siemens Semiconductor Group
Part Number BCR183S
Manufacturer Siemens Semiconductor Group
Description PNP Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit)
Published Mar 23, 2005
Detailed Description BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built i...
Datasheet PDF File BCR183S PDF File

BCR183S
BCR183S

Overview
BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10kΩ) Type BCR 183S Marking Ordering Code Pin Configuration WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 10 20 100 250 150 - 65 .
.
.
+ 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 275 ≤ 140 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 0.
5cm2 Cu Semiconductor Group 1 Nov-27-1996 BCR 183S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 50 10 1 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 0.
75 30 V 0.
3 1.
5 2.
5 13 1.
1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.
8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 1 IC = 2 mA, VCE = 0.
3 V Input resistor Resistor ratio R1 R1/R2 7 0.
9 AC Characteristics Transition frequency fT 200 3 - MHz pF - IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Nov-27-1996 BCR 183S DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 3 10 2 - hFE 10 2 IC mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 0 0.
0 0.
2 0.
4 0.
6 V IC 1.
0 V CEsat Input on Voltage Vi(on) = ...


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