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BCR183U

Infineon Technologies AG
Part Number BCR183U
Manufacturer Infineon Technologies AG
Description PNP Silicon Digital Transistor Array
Published Mar 23, 2005
Detailed Description BCR183U PNP Silicon Digital Transistor Array  Switching circuit, inverter, interface circuit, 5 6 4 driver circuit ...
Datasheet PDF File BCR183U PDF File

BCR183U
BCR183U

Overview
BCR183U PNP Silicon Digital Transistor Array  Switching circuit, inverter, interface circuit, 5 6 4 driver circuit  Two ( galvanic) internal isolated Transistors with good matching in one package  Built in bias resistor ( R1=10k, R2 =10k) C1 6 B2 5 E2 4 3 2 1 VPW09197 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type BCR183U Maximum Ratings Parameter Marking WMs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 10 20 100 250 150 -65 .
.
.
150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 118 °C Junction temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 1) RthJS  130 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-13-2001 BCR183U Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.
3 V Input resistor Resistor ratio R1 R1 /R2 Vi(on) Vi(off) VCEsat hFE IEBO ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ.
max.
Unit 50 50 30 0.
8 1 7 0.
9 10 1 100 0.
75 0.
3 1.
5 2.
5 13 1.
1 V nA mA V k - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 200 MHz 1) Pulse test: t < 300s; D < 2% 2 Dec-13-2001 BCR183U DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) 10 3 VCEsat = f (IC), hFE = 20 10 2 m...


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