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BCR183W

Infineon Technologies AG
Part Number BCR183W
Manufacturer Infineon Technologies AG
Description PNP Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR183... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bia...
Datasheet PDF File BCR183W PDF File

BCR183W
BCR183W

Overview
BCR183.
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PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR183/F/L3 BCR183T/W C 3 BCR183S BCR183U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W Marking WMs WMs WM WMs WMs WMs WMs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E Pin Configuration 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Nov-17-2003 BCR183.
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Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR183, TS ≤ 102°C BCR183F, TS ≤ 128°C BCR183L3, TS ≤ 135°C BCR183S, T S ≤ 115°C BCR183T, TS ≤ 109C BCR183U, TS ≤ 118°C BCR183W, TS ≤ 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 20 100 200 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 .
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150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 °C Unit K/W 2 Nov-17-2003 BCR183.
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Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min.
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DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 30 0,8 1 7 0,9 10 1 100 0,75 0,3 1,8 2,5 13 1,1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA mA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emi...


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