DatasheetsPDF.com

3N169

ETC
Part Number 3N169
Manufacturer ETC
Description MOS FIELD-EFFECT TRANSISTORS
Published Jul 11, 2018
Detailed Description 3N169 (SILICON) 3N170 3N171 I I SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode transistors designed ...
Datasheet PDF File 3N169 PDF File

3N169
3N169

Overview
3N169 (SILICON) 3N170 3N171 I I SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode transistors designed for low-power switching applications.
I • Low Switching Voltages - VGS(th)';; 3.
0 Vdc • Fast Switching Times .
- tr';; 10 ns I • Low Drain-Source Resistance rds(on) = 200 Ohms (Max) i • Low Reverse Transfer Car;acitance Crss = 1.
3 pF (Max) I .
.
Ma"ufdctur~TRANSISTORS N-CHANNEL ,-_.
------.
-MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating I Symbol Valu...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)