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2SD684

Part Number	2SD684
Manufacturer	Toshiba
Description	NPN Transistor
Published	Jul 16, 2018
Detailed Description	2SD684 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit i. n mm IGNITER APPLICATIONS....
Datasheet	2SD684 PDF File

Overview

2SD684 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit i.
n mm IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES • High DC Current Gain : hFE=1500 (Min.
) (VCE=2V, I C=2A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT SYMBOL v CBO v CEO Vebo XC IB PC T1 Tste RATING 600 300 5 6 1 UNIT V V V A A 30 150 -65VL50 W °C °C 'COLLECTOR 1.
BASE 2.
EMITTER COLLECTOR (CASE) TO 66 TC — 16A, TB 2 — 13 A 1 A I I ~2yk^Qif1 ELECTRICAL CHARAC...

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