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2SD685

Part Number	2SD685
Manufacturer	Toshiba
Description	NPN Transistor
Published	Jul 16, 2018
Detailed Description	2SD685 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE AND HIGH POWER SWITCHING...
Datasheet	2SD685 PDF File

Overview

2SD685 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS.
HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS.
FEATURES : .
High DC Current Gain : hFE =400 (Min.
)(VCE =2V, I C=4A) .
High Reverse Energy : Es/g=245mJ (Min.
) .
Monolithic Construction With Built-in Base-Emitter Shunt Resistor.
INDUSTRIAL APPLICATIONS Unit in mm 025.
OMAX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT —BASE o SYMBOL VCBO vCEO vebo ic IB PC T.
1 Tstg RATING 600 400 i 10 2 100 150 -65vL50 UNI...

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