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2SD686

Part Number	2SD686
Manufacturer	Toshiba
Description	NPN Transistor
Published	Jul 16, 2018
Detailed Description	:) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER...
Datasheet	2SD686 PDF File

Overview

:) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING APPLICATIONS.
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES • High DC Current Gain : hpE=2000 (Min.
(Vce=2V,Ic=1A) • Complementary to 2SB676.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation ffc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO V CEO v EBO ic pc T 3 Tstg RATING 100 80 5 4 30 150 -55M.
50 UNIT V V V A W °C °C EQUIVALENT CIRCUIT .
COLLECTOR ©EMITTER INDUSTRIAL APPLICATIONS Unit in mm 10.
3MAX.
#3.
6±0.
2 1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER ...

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