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2SD689

Part Number	2SD689
Manufacturer	Toshiba
Description	NPN Transistor
Published	Jul 16, 2018
Detailed Description	SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND INDUSTRIAL APPLIC...
Datasheet	2SD689 PDF File

Overview

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND INDUSTRIAL APPLICATIONS Unit in mm MEDIUM SPEED SWITCHING APPLICATIONS.
PULSE MOTOR DRIVE, RELAY DRIVE AND HAMMER DRIVE APPLICATIONS.
10.
3MAX, (2fe-6±0.
2 >High DC Current Gain : h FE =1000 (Min.
) (VCE =2V, I C =1A) .
Low Saturation Voltage : VcE(sat) = l .
5V(Max.
) (Ic=lA) .
Complementary to 2SB679.
x.
T 1.
5MAX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation „ .
TTc=25 C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT SYMBOL VcBO V...

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