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P4N20

STMicroelectronics
Part Number P4N20
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Jul 22, 2018
Detailed Description ® STP4N20 N - CHANNEL 200V - 1.3 Ω - 4A TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N20 200 V < 1.5 Ω 4A...
Datasheet PDF File P4N20 PDF File

P4N20
P4N20

Overview
® STP4N20 N - CHANNEL 200V - 1.
3 Ω - 4A TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N20 200 V < 1.
5 Ω 4A s TYPICAL RDS(on) = 1.
3 Ω s AVALANCHE RUGGED TECHNOLOGY )s 100% AVALANCHE TESTED t(ss LOW GATE CHARGE s HIGH CURRENT CAPABILITY cs 150 oC OPERATING TEMPERATURE dus APPLICATION ORIENTED roCHARACTERIZATION PAPPLICATIONS tes HIGH CURRENT, HIGH SPEED SWITCHING les SOLENOID AND RELAY DRIVERS os DC-DC CONVERTERS & DC-AC INVERTERS ss TELECOMMUNICATION POWER SUPPLIES Obs INDUSTRIAL MOTOR DRIVERS 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM olete Product(s) -ABSOLUTE MAXIMUM RATINGS ObsSymbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 kΩ) 200 V VGS Gate-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC ± 20 4 2.
5 V A A IDM(•) Ptot Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor 16 60 0.
48 A W W/oC Tstg Storage Temperatur...


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