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P4N60

Fairchild Semiconductor
Part Number P4N60
Manufacturer Fairchild Semiconductor
Description SSP4N60
Published Mar 12, 2008
Detailed Description www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input...
Datasheet PDF File P4N60 PDF File

P4N60
P4N60

Overview
www.
DataSheet4U.
com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.
) @ VDS = 600V Lower RDS(ON) : 2.
037 Ω (Typ.
) SSP4N60AS BVDSS = 600 V RDS(on) = 2.
5 Ω ID = 4 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 “ from case for 5-seconds 2 O 1 O 1 O 3 O o Value 600 4 2.
5 1 O Units V A A V mJ A mJ V/ns W W/ C o 16 + _ 30 262 4 10 3.
0 100 0.
8 - 55 to +150 o C 300 Thermal Resistance Symbol R θJC R θCS R θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -Max.
1.
25 -62.
5 o Units C/W Rev.
B ©1999 Fairchild Semiconductor Corporation www.
DataSheet4U.
com SSP4N60AS Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units 600 -2.
0 -----------------0.
68 ------3.
32 545 63 25 14 16 49 22 25 4 11.
9 --4.
0 100 -100 25 250 2.
5 -710 75 30 40 45 110 55 34 -...


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