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2N3025

Part Number	2N3025
Manufacturer	Motorola
Description	PNP silicon power transistors
Published	Nov 6, 2018
Detailed Description	2N3021 thru 2N3026 (SILICON) CASE1~(TO·3) ~ PNP silicon power transistors for Class C power amplifiers, high-current ...
Datasheet	2N3025 PDF File

Overview

2N3021 thru 2N3026 (SILICON) CASE1~(TO·3) ~ PNP silicon power transistors for Class C power amplifiers, high-current core switching and high-speed switching and amplifier applications.
MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Symbol 2N3021 2N3024 VCB 30 VCEO 30 2N3022 2N3025 45 45 Emitter-Base Voltage VEB 4.
0 Collector Current Base Current Ie 3.
0 IB 0.
5 Power Dissipation PD Junction Operating Temperature Range TJ 25 -65 to +175 2N3023 2N3026 60 Unit Volts 60 Volts Volts Amp Amp watts OC 2-405 2N3021 thru 2N3026 (continued) ELECTRICAL CHARACTERISTICS (At 25°C unless otherwise specified) Characteristics Emitter-Base CutoU Current (VSE = 4 Vdc) Collector-Emitter Cutoff Current (VCE = 25 Vdc, VSE = 2 Vdc) (VCE = 40 Vdc, VSE = 2 Vdc) (VCE = 54 Vdc, VSE = 2 Vdc) (VCE = IS Vdc, VSE = 2 Vdc, TC = 150°C) (VCE = 25 Vdc, VSE = 2 Vdc, TC =150°C) (VCE = 35 Vde, VSE = 2 Vde, TC = 150°C) Collector-Emitter Breakdown Voltage(IC = 100 mA...

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