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2N731

Motorola
Part Number 2N731
Manufacturer Motorola
Description NPN silicon transistor
Published Nov 8, 2018
Detailed Description 2N731 (SILICON) NPN silicon transistor designed primarily for medium'Power audio-frequency applications in industrial s...
Datasheet PDF File 2N731 PDF File

2N731
2N731

Overview
2N731 (SILICON) NPN silicon transistor designed primarily for medium'Power audio-frequency applications in industrial service, MAXIMUM RATINGS Rating CASE 22 (TO·18) Collector electrically connected to case Collector-Emitter Voltage (RBE "'~ 10 ohms) Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @TA '" 25° C Derate above 25°C Total Device Dissipation @TC = 25° C Derate above 25° C Operating Junction Temperature Storage Temperature Range Symbol VCER VCB VEB IC PD PD TJ Tstg Value 40 60 5.
0 1.
0 0.
5 3.
33 1.
5 10 +175 -65 to +200 ELECTRICAL CHARACTERISTICS =(1.
2S'C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector·Emitter Breakdown Voltage 111 (IC =100 mAde, ~E =10 ohms) Collector-Base Breakdown Voltage (IC =100 /LAde, ~ =0) Emltter·Base Breakdown Voltage (~ =100 /LAde, IC =0) Collector Cutoff Current (VCB =30 Vdc, ~ = 0) (VCB =30 Vdc, ~ =0, TA =150·C) BVCER BVCBO BVEBO ICBO ON CHARACTERI...


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