DatasheetsPDF.com

2N740

Motorola
Part Number 2N740
Manufacturer Motorola
Description NPN silicon annular transistors
Published Nov 8, 2018
Detailed Description 2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annular transistors designed for smallsignal amplifier and general purpose...
Datasheet PDF File 2N740 PDF File

2N740
2N740

Overview
2N735 (SILICON) 2N736 2N739 2N740 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
CASE 22 (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-E':mitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N735 2N73g 2N736 2N740 V CEO VCB VEB IC PD TJ' Tstg 60 80 80 125 5.
0 1.
0 500 2.
86 -65 to +200 Lead Temperature, 1/16" ± 1/32" froIn case for 10 s.
Unit Vdc Vdc Vdc Adc mW mWrC °c 2-90 2N735, 2N736, 2N739, 2N740 (Continued) ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage' III (IC = 10 mAde, IB = 0) Collector-Base Breakdown Voltage (IC = 10 !lAde, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 !lAde, IC = 0) Collector Cutoff Current (VCB = 40 Vde, IE =0) Emitter Cutoff Current (VB...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)