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HM4487B

H&M Semiconductor
Part Number HM4487B
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4487B P-Channel Enhancement Mode Power MOSFET Description The HM4487B uses advanced trench technology and design to p...
Datasheet PDF File HM4487B PDF File

HM4487B
HM4487B

Overview
HM4487B P-Channel Enhancement Mode Power MOSFET Description The HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
D G General Features ● VDS =-100V,ID =-3.
5A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance S Schematic diagram HM4487B Application ● Power management in notebook computer ● Portable equipment and battery powered systems Marking and pin Assignment 100% UIS TESTED! 100% ∆Vds TESTED! SOP-8 top view Package Marking and...


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