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PED305

semi one
Part Number PED305
Manufacturer semi one
Description P-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description PED305 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PED305 uses advanced trench technology to provide excel...
Datasheet PDF File PED305 PDF File

PED305
PED305

Overview
PED305 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PED305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
Bottom Drain Contact D1 6D D2 5D GENERAL FEATURES ● VDS = -16V,ID = -3.
5A RDS(ON) < 65mΩ @ VGS=-4.
5V RDS(ON) <75mΩ @ VGS=-2.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package G3 4S Pin 1 Pin Assignment DD G Drain Source Application ●PWM applications ●Load switch ●Power management DD S DFN2X2-6L bottom review Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC =25℃ Continuous Drain Current TC =70℃ TA =25℃ ID TA =70℃ Drain Current -Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Th...


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