DatasheetsPDF.com

SSC8120GS9

AFSEMI
Part Number SSC8120GS9
Manufacturer AFSEMI
Description N-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8120GS9 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID ESD 300mR@4V5 20V ±12V 440mR@2V5...
Datasheet PDF File SSC8120GS9 PDF File

SSC8120GS9
SSC8120GS9

Overview
SSC8120GS9 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID ESD 300mR@4V5 20V ±12V 440mR@2V5 0.
75A 1.
2K 800mR@1V8   General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .
This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Applications  Replace Digital Transistor  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers Pin Configuration Top View  Package Information Package:SOT723 Unit:mm Dim Min Typ Max A 0.
430 -- 0.
500 A1 0.
000 -- 0.
050 b 0.
170 -- 0.
270 b1 0.
270 -- 0.
370 c 0.
080 -- 0.
150 D 1.
150 -- 1.
250 E 1.
150 -- 1.
250 E1 0.
750 -- 0.
850 e 0.
800TYP θ 7°REF.
SSC-V1.
0 http://www.
afsemi.
com 1/6 Analog Future SSC8120GS9  Absolute Maximum Ratings @ TA = 25°C unless otherwise sp...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)