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SSC8120GS6

AFSEMI
Part Number SSC8120GS6
Manufacturer AFSEMI
Description N-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8120GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 I...
Datasheet PDF File SSC8120GS6 PDF File

SSC8120GS6
SSC8120GS6

Overview
SSC8120GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.
2A ESD 1.
2K  General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .
This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
 Applications  Load Switch  Portable Devices  DCDC Conversion  Pin configuration Top View  Package Information ③ ①② SOT23 Unit:mm SSC-V1.
0 http://www.
afsemi.
com 1/4 Analog Future SSC8120GS6  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range Symbol VDSS VGSS ID PD TJ, TSTG Ratings 20 ±12 1.
2 3 250 -55 to +150  Electrical Characteristics @ TA = 25°C unle...


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