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SSC8120GN1

AFSEMI
Part Number SSC8120GN1
Manufacturer AFSEMI
Description N-Channel Enhancement Mode MOSFET
Published Dec 15, 2018
Detailed Description SSC8120GN1 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 I...
Datasheet PDF File SSC8120GN1 PDF File

SSC8120GN1
SSC8120GN1

Overview
SSC8120GN1 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 0.
7A ESD 1.
2K  General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .
This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
 Applications ➢ Load Switch ➢ Portable Devices ➢ DCDC Conversion  Pin configuration bottom View  Package Information SSC-1V0 DFN1006 1/5 http://www.
afsemi.
com  Order information Device SSC8120GN1 Package DFN1006 SSC8120GN1 Marking Shipping 10000/Tape&Reel  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current a VGS@4.
5V TA = 25°C Continuous Drain Current a VGS@4.
5V TA = 70°C ID Plused Drain Current b IDM Power Dissipation...


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