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SPN4842

SYNC POWER
Part Number SPN4842
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Jan 7, 2019
Detailed Description SPN4842 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN4842 PDF File

SPN4842
SPN4842

Overview
SPN4842 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  Charger Adapter  LED Lighting FEATURES  45V/6A,RDS(ON)=9.
5mΩ@VGS=10V  45V/3A,RDS(ON)=12.
5mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) 2020/03/26 Ver 3 PART MARKING Page 1 SPN4842 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D ORDERING INFORMATION Part Number Package SPN4842S8RGB SOP-8 ※ SPN4842S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current TA=25℃ TA=100℃ Continuous Drain Current (Silicon Limited) TA=25℃ Symbol VDSS VGSS ID ID Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ IDM EAS IAS PD TJ TSTG RθJA Description Source Source Source Gate Drain Drain Drain Drain Part Marking SPN4842 Typical 45 ±20 15 9.
5 35 60 38 27 2.
5 1.
4 -55/150 -55/150 50 Unit V V A A A mJ A W ℃ ℃ ℃/W 2020/03/26 Ver 3 Page 2 SPN4842 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min.
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-R...


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