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SPN4860

SYNC POWER
Part Number SPN4860
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Jan 7, 2019
Detailed Description SPN4860 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4860 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN4860 PDF File

SPN4860
SPN4860

Overview
SPN4860 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4860 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  UPS  Motor Control  Power Tool FEATURES  60V/20A,RDS(ON)=4.
8mΩ@VGS=10V  60V/20A,RDS(ON)=6.
3mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design PIN CONFIGURATION(SOP–8) 2020/03/26 Ver 2 PART MARKING Page 1 SPN4860 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN4860S8RGB SOP-8 ※ SPN4860S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Avalanche Energy Single Pulse(L=0.
3mH, TC=25℃) Power Dissipation TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJA Part Marking SPN4860 Typical 60 ±20 21 13 140 240 3.
1 -55/150 -55/150 80 Unit V V A A mJ W ℃ ℃ ℃/W 2020/03/26 Ver 2 Page 2 SPN4860 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS VDS=0V,VGS=±20V Zero Gate Voltage Drain Current Drain-So...


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