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F10N60

ROUM
Part Number F10N60
Manufacturer ROUM
Description 10A 600V N-channel Enhancement Mode Power MOSFET
Published Jan 17, 2019
Detailed Description 10A 600V N-channel Enhancement Mode Power MOSFET F10N60 1 Description These silicon N-channel Enhanced VDMOSFETs, is o...
Datasheet PDF File F10N60 PDF File

F10N60
F10N60

Overview
10A 600V N-channel Enhancement Mode Power MOSFET F10N60 1 Description These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Which accords with the RoHS standard.
G 1 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤0.
9Ω) ● Low Gate Charge(Typical Data:32nC) ● Low Reverse Transfer Capacitances(Typical:7.
5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency.
● Power Switch Circuit of Adaptor and Charger.
2 D VDSS = 600V RDS(on)（TYP)= 0.
68Ω 3 S ID = 10A TO-220F 4 Electrical Characteristics 4.
1 Absolute Maximum Rating (Tc=25℃,unless otherwise noted) Parameter Symbol Maximum Drian-Source DC Voltage Maximum Gate-Drain Voltage VDS VGS Drain Current(continuous) ID（T=25℃） （T=100℃） Drain Curr...


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