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F10N65

Pan Jit International
Part Number F10N65
Manufacturer Pan Jit International
Description 650V N-Channel Enhancement Mode MOSFET
Published Feb 23, 2015
Detailed Description PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220...
Datasheet PDF File F10N65 PDF File

F10N65
F10N65

Overview
PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.
0Ω@VGS=10V, ID=5.
0A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives 3 2 S 1D G ITO-220AB 1 2 3 D S G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION TYPE PJP10N65 MARKING P10N65 PJF10N65 F10N65 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE 1 Gate 3 Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Symbol PJP10N65 PJF10N65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS +30 Continuous Drain Current ID 10 10 Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TA= 2 5 OC IDM PD 40 156 1.
25 40 50 0.
4 Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e Avalanche Energy with Single Pulse IAS=10A, VDD=90V, L=13mΗ Junction-to-Case Thermal Resistance TJ,TSTG E AS RθJC -55 to +150 750 0.
8 2.
5 Junction-to Ambient Thermal Resistance Note : 1.
Maximum DC current limited by the package RθJA 62.
5 100 Uni ts V V A A W OC mJ OC /W OC /W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-DEC.
25.
2009 PAGE .
1 PJP10N65 / PJF10N65 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) Parameter Static Symbol Te s t C o nd i ti o n Drain-Source Breakdown Voltag e Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain C urre nt Gate Body Leakage Dynamic B V DSS V GS(th) R D S ( o n) I DSS I GSS VGS=0V, I D=250uA VDS=VGS, I D=250uA VGS= 10V, I D= 5.
0A VDS=650V, VGS=0V VGS=+30V, VDS=0V To ta l Ga te C ha rg e Gate-Source Charge Gate-Drain Charge Turn-On D e...


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