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IRF713

GE
Part Number IRF713
Manufacturer GE
Description FIELD EFFECT POWER TRANSISTOR
Published Feb 9, 2019
Detailed Description ~[gjD~[¥i~ FIELD EFFECT POVVER TRANSISTOR IRF712,713 1.3 AMPERES 400, 350 VOLTS ROS(ON} = 5 n This series of N-Channel...
Datasheet PDF File IRF713 PDF File

IRF713
IRF713


Overview
~[gjD~[¥i~ FIELD EFFECT POVVER TRANSISTOR IRF712,713 1.
3 AMPERES 400, 350 VOLTS ROS(ON} = 5 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features • Polysilicon gate - Improved stability and reliability • No se...



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