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MMBT5551

SeCoS
Part Number MMBT5551
Manufacturer SeCoS
Description NPN Plastic Encapsulated Transistor
Published May 20, 2019
Detailed Description Elektronische Bauelemente MMBT5551 0.6A, 180V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “...
Datasheet PDF File MMBT5551 PDF File

MMBT5551
MMBT5551

Overview
Elektronische Bauelemente MMBT5551 0.
6A, 180V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Ideal for Medium Power Amplification and Switching Complementary to MMBT5401 SOT-23 MARKING G1 CLASSIFICATION OF hFE Product-Rank MMBT5551-L Range 100~200 PACKAGE INFORMATION Package MPQ SOT-23 3K MMBT5551-H 200~300 Leader Size 7 inch ORDER INFORMATION 1 Part Number Type Base MMBT5551- Lead (Pb)-free MMBT5551- -C * =hFE Rank Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction-Ambient Junction, Storage Temperature Range VCBO VCEO VEBO IC PC RθJA TJ, TSTG A L 3 Top View CB 1 2 K E 3 1 2 F Collector 3 REF.
A B C D 2 E F Emitter D G H Millimeter Min.
Max.
2.
70 3.
10 2.
10 3.
00 1.
20 1.
80 0.
89 1.
3 1.
70 2.
3 0.
30 0.
50 REF.
G H J K L J Millimeter Min.
Max.
0 0.
18 0.
55 REF.
0.
08 0.
26 0.
6 REF.
0.
95 BSC.
Ratings 180 160 6 0.
6 300 416 150, -55~150 Unit V V V A mW °C/W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Min.
Typ.
Max.
Collector-Base Breakdown Voltage V(BR)CBO 180 - - Collector-Emitter Breakdown Voltage V(BR)CEO 160 - - Emitter-Base Breakdown Voltage V(BR)EBO 6 - - Collector Cut-off Current ICBO - - 50 Emitter Cut-off Current IEBO - - 50 80 - - DC Current Gain 1 hFE 100 - 300 50 - - Collector-Emitter Saturation Voltage 1 VCE(sat) - - - 0.
15 - 0.
2 Base-Emitter Saturation Voltage 1 VBE(sat) - - 1 - - 1 Transition Frequency fT 100 - 300 Collector Output Capacitance Cob - - 6 Note: 1.
Pulse test: pulse width≦300µs, duty cycle≦2%.
http://www.
SeCoSGmbH.
com/ 27-Mar-2020 Rev.
D Unit V V V nA nA V V MHz pF Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, I...


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