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BFY50

Part Number	BFY50
Manufacturer	TT
Description	SILICON NPN TRANSISTOR
Published	Jun 23, 2019
Detailed Description	SILICON NPN TRANSISTOR BFY50 • V(BR)CEO = 35V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose ...
Datasheet	BFY50 PDF File

Overview

SILICON NPN TRANSISTOR BFY50 • V(BR)CEO = 35V (Min).
• Hermetic TO-39 Metal Package.
• Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 80V VCEO Collector – Emitter Voltage 35V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 1.
0A PD Total Power Dissipation at TA = 25°C 0.
8W Derate Above 25°C 4.
57mW/°C PD Total Power Dissipation at TC = 25°C 5W Derate Above 25°C 28.
6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max.
218.
75 35 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both...

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