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EPC2214

EPC
Part Number EPC2214
Manufacturer EPC
Description Power Transistor
Published Jun 28, 2019
Detailed Description eGaN® FET DATASHEET EPC2214 – Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 20 mΩ ID ,...
Datasheet PDF File EPC2214 PDF File

EPC2214
EPC2214

Overview
eGaN® FET DATASHEET EPC2214 – Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 20 mΩ ID , 10 A, AEC-Q101 G D S EPC2214 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 60 years.
GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VALUE VDS Drain-to-Source Voltage (Continuous) Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 80 96 ID Continuous (TA = 25°C) Pulsed (25°C, TPULSE = 300 µs) VGS Gate-to-Source Voltage Gate-to-Source Voltage 10 47 6 -4 ...


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