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EPC2207

Part Number	EPC2207
Manufacturer	EPC
Description	Power Transistor
Published	Aug 30, 2020
Detailed Description	eGaN® FET DATASHEET EPC2207 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 22 mΩ ID , 14 A D G S EPC2207 ...
Datasheet	EPC2207 PDF File

Overview

...EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VDS Drain-to-Source Voltage (Continuous) Continuous (TA = 25°C) ID Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE UNIT 200 V 14 A 54 6 V -4 -40 to 150 °C ...

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