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EPC2212

EPC
Part Number EPC2212
Manufacturer EPC
Description Power Transistor
Published Dec 4, 2021
Detailed Description eGaN® FET DATASHEET EPC2212 - Automotive 100 V (D-S) Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 13.5 mΩ ...
Datasheet PDF File EPC2212 PDF File

EPC2212
EPC2212

Overview
eGaN® FET DATASHEET EPC2212 - Automotive 100 V (D-S) Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 13.
5 mΩ ID , 18 A AEC-Q101 D G S EPC2212 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VDS Drain-to-Source Voltage (Continuous) Continuous (TA = 25°C) ID Pulsed (25°C, TPULSE = 300 µs) ...


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