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2N7000

TAITRON
Part Number 2N7000
Manufacturer TAITRON
Description N-Channel MOSFET
Published Jul 7, 2019
Detailed Description N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features ...
Datasheet PDF File 2N7000 PDF File

2N7000
2N7000


Overview
N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • RoHS compliance Mechanical Data TO-92 Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.
18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N7000 VDSS Drain-Source Voltage 60 VDGR Drain-Gate Voltage (RGS≤1MΩ) 60 VGSS ID IDP Gate-Source Voltage Drain Current Continuous Non Repetitive (tp<50µs) Continuous Pulsed ±20 ±40 200 500 PD Drain Power Dissipation 400 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V V mA mA mW °C °C TAITRON COMPONENTS INCORPORATED www.
taitroncomponents.
com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev.
B/NX Page 1 of 8 N-Channel Enhancement Mode Field Effect Transistor Equivalent Circuit 2N7000 This transistor is electrostatic sensitive device.
Please handle with caution.
Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate- Body Leakage, Forward Gate- Body Leakage, Reverse On Characteristics (Note) Min.
60 - Typ.
- Max.
1 1 -1 Unit V µA µA µA Symbol Description Min.
Typ.
Vth Gate Threshold Voltage 0.
8 RDS(ON) Drain-Source ON Resistance - VDS(ON) Drain-Source ON Voltage - ID(ON) On State Drain Current 75 gFS Forward Transconductance 100 Note: Pulse Test: Pulse Width<300µs, Duty Cycle<2% 2.
1 1.
2 1.
8 0.
6 0.
14 600 320 Max.
3.
0 5.
0 5.
3 2.
5 0.
4 - Unit V Ω Ω V V mA mS www.
taitroncomponents.
com Conditions VGS=0V, ID=10µA VDS=48V, VGS=0V VGS=15V, VDS=0V VGS=-15V, VDS=0V Conditions VDS=VGS, ID=1mA VGS=10V, ID=500mA VGS=4.
5V, ID=75mA VGS=10V, ID=500mA V...


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