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2N7002L

UTC
Part Number 2N7002L
Manufacturer UTC
Description N-CHANNEL MOSFET
Published Jul 7, 2019
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 2N7002L Preliminary 60V, 115mA, N-CHANNEL MOSFET Power MOSFET „ DESCRIPTION The UTC ...
Datasheet PDF File 2N7002L PDF File

2N7002L
2N7002L

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 2N7002L Preliminary 60V, 115mA, N-CHANNEL MOSFET Power MOSFET „ DESCRIPTION The UTC 2N7002L uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
„ FEATURES * RDS(ON) = 7.
5Ω @VGS = 10 V * Low Reverse Transfer Capacitance ( CRSS = typical 5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness „ SYMBOL 3.
Drain 3 1 2 SOT-23-3 (JEDEC TO-236) 2.
Gate 1.
Source „ ORDERING INFORMATION Ordering Number 2N7002LG-AE2-R Package SOT-23-3 Pin Assignment 123 SGD Packing Tape Reel „ MARKING www.
unisonic.
com.
tw Copyright © 2010 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R502-284.
c 2N7002L Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (Ta =25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RG=1.
0MΩ) VDGR 60 V Gate-Source Voltage Continuous Non-repetitive (tP≦50μs) VGSS VGSM ±20 ±40 V V Drain Current Continuous(TC=25°C) Pulse(Note 2) ID ±115 ±800 mA Power Dissipation (Ta = 25°C) Derate above 25°C PD 225 mW 1.
8 mW /°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Pulse width≦300μs, Duty cycle≦2% „ THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 556 UNIT °C/W „ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS(Note) Gate Threshold Voltage Drain-Source On-State Voltage On-State Drain Current Static Drain-Source On-Resistance Forward Transconductance BVDSS IDSS IGS...


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