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PMBTA42

NXP
Part Number PMBTA42
Manufacturer NXP
Description 100mA NPN high-voltage transistor
Published Jul 20, 2019
Detailed Description PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev. 05 — 12 December 2008 Product data sheet 1. Product profile 1....
Datasheet PDF File PMBTA42 PDF File

PMBTA42
PMBTA42

Overview
PMBTA42 300 V, 100 mA NPN high-voltage transistor Rev.
05 — 12 December 2008 Product data sheet 1.
Product profile 1.
1 General description NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PMBTA92.
1.
2 Features „ High voltage (max.
300 V) 1.
3 Applications „ Telephony and professional communication equipment 1.
4 Quick reference data Table 1.
Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Conditions open base VCE = 10 V IC = 1 mA IC = 10 mA IC = 30 mA Min Typ Max Unit - - 300 V - - 100 mA 25 40 40 - - 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Description base emitter collector Simplified outline Graphic symbol 33 12 1 2 sym021 NXP Semiconductors PMBTA42 300 V, 100 mA NPN high-voltage transistor 3.
Ordering information 4.
Marking Table 3.
Ordering information Type number[1] Package Name Description PMBTA42 - plastic surface-mounted package; 3 leads PMBTA42/DG [1] /DG: halogen-free Version SOT23 Table 4.
Marking codes Type number[1] PMBTA42 PMBTA42/DG [1] /DG: halogen-free [2] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5.
Limiting values Marking code[2] *1D *BV Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation junction temperature ambient temperature storage temperature open emitter open base open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C - - [1] −65 −65 Max Unit 300 V 300 V 6V 100 mA 200 mA 100 mA 250 150 +150 +150 mW °C °C °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
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