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PMBTA06

Philips
Part Number PMBTA06
Manufacturer Philips
Description NPN general purpose transistor
Published May 9, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA06 NPN general purpose transistor Product specification ...
Datasheet PDF File PMBTA06 PDF File

PMBTA06
PMBTA06

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA06 NPN general purpose transistor Product specification Supersedes data of 1998 Jul 20 1999 Apr 29 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • High current (max.
500 mA) • Low voltage (max.
80 V).
APPLICATIONS • General purpose switching and amplification in e.
g.
telephony and professional communication equipment.
DESCRIPTION NPN transistor in a SOT23 plastic package.
PNP complement: PMBTA56.
handbook, halfpage PMBTA06 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER PMBTA06 Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.
1 MARKING CODE(1) ∗1G Top view 1 2 MAM255 2 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
MAX.
80 80 4 500 1 200 250 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 1999 Apr 29 2 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE VCEsat VBE fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter voltage transition frequency CONDITIONS IE = 0; VCB = 80 V IC = 0; VEB = 5 V IC = 10 mA; VCE = 1 V IC = 100 mA; VCE = 1 V IC = 100 mA; IB = 10 mA IC = 100 mA; VCE = 1 V − − 100 100 − − MIN.
PARAMETER thermal resis...


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