DatasheetsPDF.com

PMBTA56

Philips
Part Number PMBTA56
Manufacturer Philips
Description PNP general purpose transistor
Published May 9, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET PMBTA56 PNP general purpose transistor Product specification Supersedes data of 1999...
Datasheet PDF File PMBTA56 PDF File

PMBTA56
PMBTA56

Overview
DISCRETE SEMICONDUCTORS DATA SHEET PMBTA56 PNP general purpose transistor Product specification Supersedes data of 1999 Apr 09 2004 Jan 09 Philips Semiconductors Product specification PNP general purpose transistor FEATURES • High current (max.
500 mA) • Low voltage (max.
80 V).
APPLICATIONS • General purpose switching and amplification, e.
g.
telephony and professional communication equipment.
DESCRIPTION handbook, halfpage PMBTA56 PINNING PIN 1 2 3 base emitter collector DESCRIPTION PNP transistor in a SOT23 plastic package.
NPN complement: PMBTA06.
MARKING TYPE NUMBER PMBTA56 Note 1.
* = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION TYPE NUMBER PMBTA56 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *2G Top view 3 3 1 2 1 2 MAM256 Fig.
1 Simplified outline (SOT23) and symbol.
VERSION SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector MIN.
− − − − − − − −65 − −65 MAX.
−80 −80 −5 −500 −1 −200 250 +150 150 +150 UNIT V V V mA A mA mW °C °C °C 2004 Jan 09 2 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE VCEsat VBE fT PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −80 V IC = 0; VEB = −5 V IC = −10 mA; VCE = −1 V IC = −100 mA; VCE = −1 V collector-emitter saturation voltage...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)