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BAS116H

nexperia
Part Number BAS116H
Manufacturer nexperia
Description Low leakage switching diode
Published Jul 27, 2019
Detailed Description BAS116H Low leakage switching diode Rev. 3 — 31 May 2011 Product data sheet 1. Product profile 1.1 General descriptio...
Datasheet PDF File BAS116H PDF File

BAS116H
BAS116H


Overview
BAS116H Low leakage switching diode Rev.
3 — 31 May 2011 Product data sheet 1.
Product profile 1.
1 General description Low leakage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package.
1.
2 Features and benefits  Small and flat lead SMD plastic package  Low leakage current  Excellent coplanarity and improved thermal behavior  AEC-Q101 qualified 1.
3 Applications  General-purpose switching 1.
4 Quick reference data Table 1.
Symbol IF IR VR trr Quick reference data Parameter forward current reverse current reverse voltage reverse recovery time Conditions VR = 75 V Min [1][2] - [3] - Typ 0.
003 0.
8 Max 215 5.
0 75 3.
0 Unit mA nA V s [1] Pulse test: tp  300 s;   0.
02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
2.
Pinning information Table 2.
Pin 1 2 Pinning Description cathode anode [1] The marking bar indicates the cathode.
Simplified outline [1] 12 Graphic symbol 12 sym001 Nexperia BAS116H Low leakage switching diode 3.
Ordering information Table 3.
Ordering information Type number Package Name Description BAS116H - plastic surface-mounted package; 2 leads Version SOD123F 4.
Marking Table 4.
Marking codes Type number BAS116H Marking code B1 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min VRRM repetitive peak reverse voltage - VR reverse voltage IF forward current IFRM repetitive peak forward current [1][2] - - IFSM Ptot non-repetitive peak forward current total power dissipation square wave tp = 1 s tp = 1 ms tp = 1 s Tamb  25 C [3] [1][4] - [5] Max 85 75 215 500 4 1 0.
5 375 Tj Tamb Tstg junction temperature ambient temperature storage temperature - 150 65 +150 65 +150 [1] Device mounted on an FR4 PCB, ...


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