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BAS11

NXP
Part Number BAS11
Manufacturer NXP
Description Controlled avalanche rectifiers
Published Mar 26, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BAS11; BAS12 Controlled avalanche rectifiers Product specific...
Datasheet PDF File BAS11 PDF File

BAS11
BAS11

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BAS11; BAS12 Controlled avalanche rectifiers Product specification Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack.
k a BAS11; BAS12 These packages are hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
DESCRIPTION Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating Implotec™(1) technology.
(1) Implotec is a trademark of Philips.
MAM196 Marking code BAS11: S11.
Marking code BAS12: S12.
Fig.
1 Simplified outline (SOD91) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM BAS11 BAS12 VRWM working reverse voltage BAS11 BAS12 VR continuous reverse voltage BAS11 BAS12 IF(AV) average forward current averaged over any 20 ms period; Ttp = 75 °C; lead length = 10 mm; see Figs 2 and 4 averaged over any 20 ms period; Tamb = 30 °C; PCB mounting (see Fig.
8); see Figs 3 and 4 IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax t = 10 µs square wave; f = 50 Hz; Tamb = 25 °C − − − 300 400 350 V V mA − − 300 400 V V PARAMETER repetitive peak reverse voltage − − 300 400 V V CONDITIONS MIN.
MAX.
UNIT − 300 mA − 4 A PRRM Tstg Tj repetitive peak reverse power dissipation storage temperature junction temperature − −65 −65 75 +150 +150 W °C °C 1996 Sep 26 2 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified.
SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BAS11 BAS12 IR trr reverse current reverse recovery time VR = VRRMmax; see Fig.
6 VR = VRRMmax; Tj = 125 °C; see Fig.
6 when swit...


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