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PSMN057-200B

nexperia
Part Number PSMN057-200B
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General descript...
Datasheet PDF File PSMN057-200B PDF File

PSMN057-200B
PSMN057-200B

Overview
PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1.
General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
2.
Features and benefits • Higher operating power due to low thermal resistance • Low conduction losses due to low on-state resistance • Suitable for high frequency applications due to fast switching characteristics 3.
Applications • DC-to-DC converters • Switched-mode power supplies 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C Ptot total power dissipation Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 17 A; Tj = 25 °C resistance Dynamic characteristics QGD gate-dra...


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