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PSMN057-200P

Philips
Part Number PSMN057-200P
Manufacturer Philips
Description N-channel TrenchMOS transistor
Published May 17, 2005
Detailed Description Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES • ’Trench’ technology • Very low...
Datasheet PDF File PSMN057-200P PDF File

PSMN057-200P
PSMN057-200P

Overview
Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance g PSMN057-200P QUICK REFERENCE DATA d SYMBOL VDSS = 200 V ID = 39 A RDS(ON) ≤ 57 mΩ s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.
Applications:• d.
c.
to d.
c.
converters • switched mode power supplies The PSMN060-200P is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN.
- 55 MAX.
200 200 ± 20 39 27.
5 156 250 175 UNIT V V V A A A W ˚C June 2000 1 Rev 1.
000 Philips Semiconductors Product specification N-channel TrenchMOS transistor AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS IAS Non-repetitive avalanche energy Non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 35 A; tp = 100 µs; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; PSMN057-200P MIN.
- MAX.
300 35 UNIT mJ A THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP.
in free air 60 MAX.
0.
6 UNIT K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld L...


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