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PSMN057-200P

nexperia
Part Number PSMN057-200P
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 4 January 2011 Product data sheet 1. Produc...
Datasheet PDF File PSMN057-200P PDF File

PSMN057-200P
PSMN057-200P

Overview
PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev.
02 — 4 January 2011 Product data sheet 1.
Product profile 1.
1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.
2 Features and benefits „ Higher operating power due to low thermal resistance „ Low conduction losses due to low on-state resistance „ Suitable for high frequency applications due to fast switching characteristics 1.
3 Applications „ DC-to-DC converters „ Switched-mode power supplies 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 2...


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