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2N7002BK

nexperia
Part Number 2N7002BK
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General...
Datasheet PDF File 2N7002BK PDF File

2N7002BK
2N7002BK

Overview
2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev.
1 — 17 June 2010 Product data sheet 1.
Product profile 1.
1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 2 kV „ AEC-Q101 qualified 1.
3 Applications „ Relay driver „ High-speed line driver „ Low-side loadswitch „ Switching circuits 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA - - 60 V - - ±20 V [1] - - 350 mA - 1 1.
6 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Symbol G S D Description gate source drain 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Simplified outline Graphic symbol 3D 1 2G S 017aaa000 3.
Ordering information Table 3.
Ordering information Type number Package Name Description 2N7002BK TO-236AB plastic surface-mounted package; 3 leads 4.
Marking Table 4.
Marking codes Type number 2N7002BK [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5.
Limiting values Marking code[1] LN* Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min VDS drain-source voltage Tamb = 25 °C - VGS gate-source voltage Tamb = 25 °C - ID drain current VGS = 10 V [1] Tamb = 25 °C - Tamb = 100 °C - IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 μs - Version SOT23 Max Unit 60 V ±20 V 350 mA 245 mA 1.
2 A 2N7002BK Product data sheet All informati...


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