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TPS2301

Texas Instruments
Part Number TPS2301
Manufacturer Texas Instruments
Description DUAL HOT-SWAP POWER CONTROLLERS
Published Sep 24, 2019
Detailed Description www.ti.com TPS2300 TPS2301 SLVS265H – FEBRUARY 2000 – REVISED JULY 2013 DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDE...
Datasheet PDF File TPS2301 PDF File

TPS2301
TPS2301

Overview
www.
ti.
com TPS2300 TPS2301 SLVS265H – FEBRUARY 2000 – REVISED JULY 2013 DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING Check for Samples: TPS2300, TPS2301 FEATURES 1 • Dual-Channel High-Side MOSFET Drivers • IN1: 3 V to 13 V; IN2: 3 V to 5.
5 V • Output dV/dt Control Limits Inrush Current • Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • Power-Good Reporting With Transient Filter • CMOS- and TTL-Compatible Enable Input • Low, 5-μA Standby Supply Current (Max) • Available in 20-Pin TSSOP Package • 40°C to 85°C Ambient Temperature Range • Electrostatic Discharge Protection APPLICATIONS • Hot-Swap/Plug/Dock Power Management • Hot-Plug PCI, Device Bay • Electronic Circuit Breaker DESCRIPTION The TPS2300 and TPS2301 are dual-channel hotswap controllers that use external N-channel MOSFETs as high-side switches in power applications.
Features of these devices, such as overcurrent protection (OCP), inrush current control, output-power status reporting, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications.
GATE1 GATE2 DGND TIMER VREG VSENSE2 VSENSE1 AGND ISENSE2 ISENSE1 PW PACKAGE (TOP VIEW) 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 DISCH1 DISCH2 ENABLE PWRGD1 FAULT ISET1 ISET2 PWRGD2 IN2 IN1 NOTE: Terminal 18 is active high on TPS2301.
typical application V1 3 V − 13 V IN1 VREG ISET1 ISENSE1 GATE1 VO1 + DISCH1 VSENSE1 AGND DGND TPS2300 ENABLE IN2 ISET2 ISENSE2 GATE2 PWRGD1 FAULT TIMER PWRGD2 DISCH2 VSENSE2 V2 3 V − 5.
5 V VO2 + The TPS2300/01 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the device is off at start-up and confirm the status of the output voltage rails during operation.
Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs.
The charge pumps control both the rise times an...


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