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TPS2331

Texas Instruments
Part Number TPS2331
Manufacturer Texas Instruments
Description SINGLE HOT-SWAP POWER CONTROLLERS
Published Jul 3, 2022
Detailed Description www.ti.com TPS2330 TPS2331 SLVS277G – MARCH 2000 – REVISED JULY 2013 SINGLE HOT-SWAP POWER CONTROLLERS WITH CIRCUIT BR...
Datasheet PDF File TPS2331 PDF File

TPS2331
TPS2331


Overview
www.
ti.
com TPS2330 TPS2331 SLVS277G – MARCH 2000 – REVISED JULY 2013 SINGLE HOT-SWAP POWER CONTROLLERS WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING Check for Samples: TPS2330, TPS2331 FEATURES 1 • Single-Channel High-Side MOSFET Driver • Input Voltage: 3 V to 13 V • Output dV/dt Control Limits Inrush Current • Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • Power-Good Reporting With Transient Filter • CMOS- and TTL-Compatible Enable Input • Low 5-μA Standby Supply Current (Max) • Available in 14-Pin SOIC and TSSOP Package • –40°C to 85°C Ambient Temperature Range • Electrostatic Discharge Protection APPLICATIONS • Hot-Swap/Plug/Dock Power Management • Hot-Plug PCI, Device Bay • Electronic Circuit Breaker D OR PW PACKAGE (TOP VIEW) GATE 1 DGND 2 TIMER 3 VREG 4 VSENSE 5 AGND 6 ISENSE 7 14 DISCH 13 ENABLE 12 PWRGD 11 FAULT 10 ISET 9 AGND 8 IN NOTE: Terminal 13 is active-high on TPS2331.
typical application VIN 3 V–13 V IN VREG ISET ISENSE GATE VO + DISCH VSENSE AGND DGND ENABLE TPS2330 PWRGD FAULT TIMER DESCRIPTION The TPS2330 and TPS2331 are single-channel hot-swap controllers that use external N-channel MOSFETs as high-side switches in power applications.
Features of these devices, such as overcurrent protection (OCP), inrush-current control, output-power status reporting, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications.
The TPS2330/31 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the device is off at start-up and confirm the status of the output voltage rails during operation.
An internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs.
The charge pump controls both the rise times and fall times (dV/dt) of the MOSFETs, reducing power transients during power up/down.
The circuit-breaker functionality combine...



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