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TPS2311

Texas Instruments
Part Number TPS2311
Manufacturer Texas Instruments
Description DUAL HOT-SWAP POWER CONTROLLERS
Published Jul 3, 2022
Detailed Description www.ti.com TPS2310 TPS2311 SLVS275H – FEBRUARY 2000 – REVISED JULY 2013 DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPE...
Datasheet PDF File TPS2311 PDF File

TPS2311
TPS2311

Overview
www.
ti.
com TPS2310 TPS2311 SLVS275H – FEBRUARY 2000 – REVISED JULY 2013 DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING Check for Samples: TPS2310, TPS2311 FEATURES 1 • Dual-Channel High-Side MOSFET Drivers • IN1: 3 V to 13 V; IN2: 3 V to 5.
5 V • Output dV/dt Control Limits Inrush Current • Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • Power-Good Reporting With Transient Filter • CMOS- and TTL-Compatible Enable Input • Low, 5-μA Standby Supply Current .
(Max) • Available in 20-Pin TSSOP Package • –40°C to 85°C Ambient Temperature Range • Electrostatic Discharge Protection APPLICATIONS • Hot-Swap/Plug/Dock Power Management • Hot-Plug PCI, Device Bay • Electronic Circuit Breaker DESCRIPTION The TPS2310 and TPS2311 are dual-channel hotswap controllers that use external N-channel MOSFETs as high-side switches in power applications.
Features of these devices, such as overcurrent protection (OCP), inrush current control, output-power status reporting, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications.
GATE1 GATE2 DGND TIMER VREG VSENSE2 VSENSE1 AGND ISENSE2 ISENSE1 PW PACKAGE (TOP VIEW) 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 DISCH1 DISCH2 ENABLE PWRGD1 FAULT ISET1 ISET2 PWRGD2 IN2 IN1 NOTE: Terminal 18 is active high on TPS2311.
typical application V1 3 V − 13 V IN1 VREG ISET1 ISENSE1 GATE1 VO1 + DISCH1 VSENSE1 AGND DGND TPS2310 ENABLE IN2 ISET2 ISENSE2 GATE2 PWRGD1 FAULT TIMER PWRGD2 DISCH2 VSENSE2 V2 3 V − 5.
5 V VO2 + The TPS2310/11 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the device is off at start-up and confirm the status of the output voltage rails during operation.
Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs.
The charge pumps contr...


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