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NTE2948

Part Number	NTE2948
Manufacturer	NTE
Description	N-Channel MOSFET
Published	Jan 23, 2020
Detailed Description	NTE2948 MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Type Package D Features: D Low Drain−Source ON Resi...
Datasheet	NTE2948 PDF File

Overview

NTE2948 MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Type Package D Features: D Low Drain−Source ON Resistance: RDS(ON) = 4 (Typ) D High Forward Transfer Admittance: |yfs| = 0.
6S (Typ) D Low Leakage Current: IDSS = 100A (Max) (VDS = 400V) D Enhancement Model: Vth = 2 to 4V (VDS = 10V, ID = 1mA) Applications: D DC−DC Converter D Relay Drive D Motor Drive G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS .
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400V Drain−Gate Voltage (RGS = 20k), VDGR .
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400V Gate−Source Voltage, VGS .
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30V Drain Current (Note DC .
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1A Pulsed .
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3A Drain Power Dissipation (TC = +25C), PD .
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20W Single Pulsed Avalanche Energy (Note 2), EAS .
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113mJ Avalanche Current, IAR .
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1A Repetitive Avalanche Energy (Note 3), EAR .
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2mJ Channel Temperature, Tch .
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+150C Storage Temperature Range, Tstg .
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