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NTE2997

NTE
Part Number NTE2997
Manufacturer NTE
Description P-Channel MOSFET
Published Jan 23, 2020
Detailed Description NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Good Frequency Characteristics D High Speed Sw...
Datasheet PDF File NTE2997 PDF File

NTE2997
NTE2997

Overview
NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Operation D Enhancement Mode D Equipped with Gate Protection Diodes Applications: D Low Frequency Power Amplifier D G S Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain−Source Voltage, VDSX .
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160V Gate−Source Voltage, VGSS .
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±15V Drain Current, ID .
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7A Body to Drain Diode Reverse Drain Current, IDR .
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7A Channel Dissiption (TC = +25°C), PCH .
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