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MMBT5551

Part Number	MMBT5551
Manufacturer	NTE
Description	Silicon NPN Transistor
Published	Feb 3, 2020
Detailed Description	MMBT5551 Silicon NPN Transistor High Voltage Amp/Driver SOT−23 Type Surface Mount Package Description: The MMBT5551 is ...
Datasheet	MMBT5551 PDF File

Overview

MMBT5551 Silicon NPN Transistor High Voltage Amp/Driver SOT−23 Type Surface Mount Package Description: The MMBT5551 is a silicon NPN transistor in an SOT−23 type surface mount case designed for use in high voltage applications.
Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO .
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160V Collector−Base Voltage, VCBO .
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180V Emitter−Base Voltage, VEBO .
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6V Continuous Collector Current, IC .
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600mA Total PDowerearteDiAsbsiopvaetio2n5(CTA.
= +25C, .
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FR−5 .
Board, .
Note 1), .
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225mW 1.
8mW/C Thermal Resistance, Junction−to−Ambient, RthJA .
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556C/mW Total PDowerearteDiAsbsiopvaetio2n5(CTA.
= +25C, .
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Alumina .
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Substrate, Note 2), .
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300mW 2.
4mW/C Thermal Resistance, Junction−to−Ambient, RthJA .
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417C/mW Operating Junction Temperature Range, TJ .
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−55 to +150C Storage Temperature Range, Tstg .
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−55 to +150C Note 1.
FR−5 = 1.
000 (25.
4mm) x .
750 (19.
05mm) x .
062 (1.
57mm).
Note 2.
Alumina = .
400 (10.
2mm) x .
300 (7.
62mm) x .
024 (.
609mm), 99.
5% alumina.
Electrical Characteristics: (TA = +25C unless oth...

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